Helium-Assisted Glancing Angle Deposition of Thin Films of TiCuOx and WOx for Conductometric Hydrogen Sensing
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F24%3A43972649" target="_blank" >RIV/49777513:23520/24:43972649 - isvavai.cz</a>
Alternative codes found
RIV/49777513:23520/24:43972654 RIV/49777513:23520/24:43973139
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Helium-Assisted Glancing Angle Deposition of Thin Films of TiCuOx and WOx for Conductometric Hydrogen Sensing
Original language description
In the quest for efficient hydrogen detection, the limitations of current sensors – such as low sensitivity and selectivity – pose significant challenges. Advancements in hydrogen sensing materials and techniques are essential to improve safety and efficiency. This study pioneers a novel helium-assisted sputter deposition technique for TiCuOx and WOx films, targeting enhancement of active surface area and therefore improvement of sensing performance. We also describe how a helium-rich working atmosphere induces changes in the structure of the thin films. TiCuOx films were deposited using conventional DC magnetron sputtering, employing a circular titanium target with adjacent copper strip in various working gas mixtures of argon, helium, and oxygen, with fixed value of total pressure of approximately 520 mPa. The glancing angle deposition (GLAD) technique was initially employed to induce a columnar nanostructure, increasing the films' surface roughness and porosity and thereby enhancing hydrogen interaction. Accompanying GLAD, helium was introduced as a replacement for part of argon to modify the TiCuOx films' surface characteristics further.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů