Helium-assisted deposition of Cu-doped TiO2 for Conductometric Hydrogen Sensing via DC Magnetron Sputtering

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F25%3A43976169" target="_blank" >RIV/49777513:23520/25:43976169 - isvavai.cz</a>

Alternative codes found

RIV/49777513:23520/25:43976367

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Helium-assisted deposition of Cu-doped TiO2 for Conductometric Hydrogen Sensing via DC Magnetron Sputtering

Original language description

This study presents a novel helium-assisted sputter deposition method for Cu-doped TiO₂ conductometric sensors, intending to enhance the active surface area through microstructure modification, thereby improving sensing capabilities. This is achieved by careful optimization of discharge parameters, while the working gas consists of a mixture of argon, helium and oxygen. Partial replacement of argon with helium leads to the formation of structured porous films. The influence on the sensing response and the possible explanation of the effect on helium-rich working gas is discussed.Cu-doped TiO₂ films were fabricated using conventional DC magnetron sputtering, utilizing a circular titanium target with an adjacent copper strip in carefully controlled working gas mixtures of argon, helium, and oxygen, maintaining a total pressure of approximately 520 mPa. Helium was introduced as a replacement for part of argon in the working gas mixture of argon and oxygen. After deposition, samples were annealed at 400 °C in ambient air to crystallise and stabilize the films for hydrogen sensing. A series of different helium concentrations was prepared, varying the helium content from 0% to 95% in the working gas. The glancing angle deposition (GLAD) technique was applied to enhance the films&apos; active surface area. The copper doping was chosen to make the films more conductive since the undoped titania films are nearly insulating. X-ray diffraction patterns revealed the effect of helium on film microstructure: Films deposited under helium exhibit both anatase and rutile phases, whereas films deposited without helium shows only the anatase phase. Scanning electron microscope observation reveals a grain size reduction with increasing plasma helium content. Nevertheless, the most pronounced effect was the distinct change in the structure, which appears highly porous for the films prepared with helium. Conductometric sensing was carried out using a four-point probe, demonstrating that helium usage leads to a 600% increase in sensor response for Cu-doped TiO₂ films (maximum He vs 0% Helium).

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

20506 - Coating and films

Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů