Microstructure related characterization of a-Si:H thin films PECVD deposited under varied hydrogen dilution

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F07%3A00501167" target="_blank" >RIV/49777513:23640/07:00501167 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Microstructure related characterization of a-Si:H thin films PECVD deposited under varied hydrogen dilution

Original language description

We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H) with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2007

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Advances in Electrical and Electronic Engineering

ISSN

1336-1376

e-ISSN

—

Volume of the periodical

6

Issue of the periodical within the volume

3

Country of publishing house

SK - SLOVAKIA

Number of pages

4

Pages from-to

—

UT code for WoS article

—

EID of the result in the Scopus database

—