Study of Re-crystallization Processes in Amorphous Silicon Films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F10%3A00503315" target="_blank" >RIV/49777513:23640/10:00503315 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Study of Re-crystallization Processes in Amorphous Silicon Films
Original language description
Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using ?in-situ? X-ray diffraction (XRD). The experiments have given information about phase transformation from the amorphous to polycrystalline phase and were carried out at temperatures in the range of 580 °C to 620 °C. The average crystalline size of crystallized films was found from 40 to 50 nm. Structural properties of the initial amorphous and re-crystallized films were also investigated by Raman spectroscopy. Optical properties (refractive indices, extinction coefficients) of a-Si:H and poly-Si films were analyzed by UV Vis spectrophotometry. The absorption properties of the films were carried out from the UV Vis ex
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings 27th International Conference on Microelectronics
ISBN
978-1-4244-7198-0
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
—
Publisher name
Electron Devices Society of the Institute of Electrical and Electronics Engineers
Place of publication
Niš
Event location
Niš, Serbia
Event date
Jan 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—