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Study of Re-crystallization Processes in Amorphous Silicon Films

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F10%3A00503315" target="_blank" >RIV/49777513:23640/10:00503315 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Study of Re-crystallization Processes in Amorphous Silicon Films

  • Original language description

    Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using ?in-situ? X-ray diffraction (XRD). The experiments have given information about phase transformation from the amorphous to polycrystalline phase and were carried out at temperatures in the range of 580 °C to 620 °C. The average crystalline size of crystallized films was found from 40 to 50 nm. Structural properties of the initial amorphous and re-crystallized films were also investigated by Raman spectroscopy. Optical properties (refractive indices, extinction coefficients) of a-Si:H and poly-Si films were analyzed by UV Vis spectrophotometry. The absorption properties of the films were carried out from the UV Vis ex

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings 27th International Conference on Microelectronics

  • ISBN

    978-1-4244-7198-0

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

  • Publisher name

    Electron Devices Society of the Institute of Electrical and Electronics Engineers

  • Place of publication

    Niš

  • Event location

    Niš, Serbia

  • Event date

    Jan 1, 2010

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article