Modification of physical properties of sputtered zinc oxide thin films by introduction of gallium and nitrogen
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F11%3A43911858" target="_blank" >RIV/49777513:23640/11:43911858 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Modification of physical properties of sputtered zinc oxide thin films by introduction of gallium and nitrogen
Original language description
Our previous investigations showed that nitrogen doping had a great impact on microstructure, electrical and optical properties of sputtered ZnO thin films. Aims of current research are to investigate the influence of nitrogen implantation and post-implantation annealing on physical properties of sputtered ZnO:Ga thin films and once more to attempt p-type doping.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 17th International Conference on Applied Physics of Condensed Matter
ISBN
978-80-554-0386-1
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
61-64
Publisher name
University of Žilina
Place of publication
Žilina
Event location
Spa Nový Smokovec, High Tatras, Slovakia
Event date
Jun 22, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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