Study of the effect of boron doping on the solid phase crystallization of hydrogenated amorphous silicon films.

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F14%3A43923336" target="_blank" >RIV/49777513:23640/14:43923336 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.tsf.2014.07.040" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2014.07.040</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2014.07.040" target="_blank" >10.1016/j.tsf.2014.07.040</a>

Result language
angličtina
Original language name
Study of the effect of boron doping on the solid phase crystallization of hydrogenated amorphous silicon films.
Original language description
Thin-?lm polycrystalline silicon on glass obtained by crystallization of hydrogenated amorphous silicon (a-Si:H) ?lms is an interesting alternative for thin-?lm silicon solar cells. Although the solar-cell ef?ciencies are still limited, this technique offers excellent opportunity to study the in?uence of B-doping on the crystallization process of a-Si:H. Our approach is to slowly crystallize B-doped a-Si:H ?lms by solid phase crystallization in the temperature range 580-600°C.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JJ - Other materials
OECD FORD branch
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Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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