Crystallized silicon nanostructures - experimental characterization and atomistic simulations

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F14%3A43923959" target="_blank" >RIV/49777513:23640/14:43923959 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1139/cjp-2013-0442" target="_blank" >http://dx.doi.org/10.1139/cjp-2013-0442</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1139/cjp-2013-0442" target="_blank" >10.1139/cjp-2013-0442</a>

Result language
angličtina
Original language name
Crystallized silicon nanostructures - experimental characterization and atomistic simulations
Original language description
We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100 degrees C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon(nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated amorphous silicon and silicon oxide (SiO2) were deposited by plasma enhanced chemical vapor deposition on crystalline silicon and Corning glass substrates.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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