Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal?Oxide?Semiconductor Heterostructure Field Effect Transistors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F10%3A00022994" target="_blank" >RIV/60461373:22310/10:00022994 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal?Oxide?Semiconductor Heterostructure Field Effect Transistors

Original language description

We report on the technology of a very thin oxidized Al sputtered film used for gate insulation and passivation in Al2O3/AlGaN/GaN metal?oxide?semiconductor heterostructure field-effect transistors (MOSHFETs). Their transport properties are presented. TheMOSHFET with the Al2O3 layer had improved static output and transfer characteristics compared with the reference heterostructure field-effect transistors (HFETs): (1) their saturation drain current IDS was 600 mA mm-1 at gate voltage VG=1 V (HFETs with2.5 ?m gates had 430 mA mm-1); (2) their transconductance was 116?140 mS mm-1 (HFETs had 70 mS mm-1).

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CA - Inorganic chemistry

OECD FORD branch

—

Project

—

Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Jpn.Journal Appl.Phys.

ISSN

0021-4922

e-ISSN

—

Volume of the periodical

49

Issue of the periodical within the volume

4

Country of publishing house

JP - JAPAN

Number of pages

3

Pages from-to

—

UT code for WoS article

000277300700071

EID of the result in the Scopus database

—