Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F10%3A00023030" target="_blank" >RIV/60461373:22310/10:00023030 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC
Original language description
A set of Ti/Ni metallizations with different thickness of the underlying titanium layer was prepared on 6H-SiC together with structures that contained only pure Ti and Ni. Samples were gradually annealed at 750?1150°C. Structures Ti(2)/Ni(50) and Ti(100)/Ni(50) showed the lowest contact resistivity, 2x10-4 cm2 in both cases. For the Ti(2)/Ni(50) structure, low contact resistivity was reached most likely due to reduction of surface oxides on SiC by the thin titanium layer. In the Ti(100)/Ni(50) structure, the titanium layer prevents diffusion of nickel towards SiC and there is a layer containing mainly TiC at the interface with silicon carbide.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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