Graphene preparation by annealing of metal/SiC structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F13%3A43896495" target="_blank" >RIV/60461373:22310/13:43896495 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Graphene preparation by annealing of metal/SiC structures
Original language description
Graphene sheets have been prepared on the basis of reaction of several metals with silicon carbide. The best graphene has been obtained in the case of Co/SiC structures. Number of carbon mono-layers in the prepared graphene and its crystallinity were determined by Raman spectroscopy.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings EDS13 IMAPS CS International Conference
ISBN
978-80-214-4754-7
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
11-14
Publisher name
VUT Brno
Place of publication
Brno
Event location
Brno
Event date
Jun 26, 2013
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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