Preparation of Si/SiC ohmic contacts in different environments

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F14%3A43898154" target="_blank" >RIV/60461373:22310/14:43898154 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Preparation of Si/SiC ohmic contacts in different environments

Original language description

The goal of our work was preparation of the Si/SiC type ohmic contacts under various conditions. Si/SiC contact structures annealed in an argon atmosphere are of worse contact resistivity in comparison with the same structures annealed under vacuum. LowAr pressure annealing provides good surface morphology. The secondary contacts seem to combine only favorable characteristics of the two processes.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JJ - Other materials

OECD FORD branch

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Project

<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

EDS'13 IMAPS CS International Conference Proceedings

ISBN

978-80-214-4985-5

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

15-18

Publisher name

Vysoké učení technické v Brně

Place of publication

Brno

Event location

Brno

Event date

Jun 25, 2014

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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