The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27350%2F09%3A00021680" target="_blank" >RIV/61989100:27350/09:00021680 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry

Original language description

Techniques of spectral reflectometry and interferometry are used for measuring small changes in thickness of SiO2 thin film grown by thermal oxidation on different silicon substrates. A slightly dispersive Michelson interferometer with one of its mirrorsreplaced by a thin-film structure is used to measure the reflectance and interferometric phase of the thin-film structure at the same time. The experimental data are used to determine precisely the thickness of the SiO2 thin film on silicon wafers of two crystallographic orientations and different dopant concentrations.We confirmed very good agreement between the experimental data and theory and revealed that the thin-film thickness, which varies with the type of silicon substrate, depends linearly onthe wavelength at which minimum in the spectral reflectance occurs. Similar behaviour was revealed for the interferometric phase.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BH - Optics, masers and lasers

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

APPLIED PHYSICS B-LASERS AND OPTICS

ISSN

0946-2171

e-ISSN

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Volume of the periodical

95

Issue of the periodical within the volume

4

Country of publishing house

US - UNITED STATES

Number of pages

5

Pages from-to

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UT code for WoS article

000266073200023

EID of the result in the Scopus database

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