Study of think layers at the production of solar cells

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27360%2F02%3A00001734" target="_blank" >RIV/61989100:27360/02:00001734 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Study of think layers at the production of solar cells

Original language description

The results of experimental measurements of thin metal layers on the silicon substrates used as contacts of solar cells are described in this work. It was found out that at higher pressures of working gas the adhesion of sputtered layers to the substratedecreases because of more frequent collisions between the sputtered material particles and ions of gas. The process of depositing the thin Ti-Cu layers on the silicon substrate by means of magnetron sputtering at the gas working pressure 330 mPa and Ts/Tm = 0.22 appears to be optimal. It ensures the most convenient combinations of the required adhesive and electric parameters.

Czech name

—

Czech description

—

Type

D - Article in proceedings

CEP classification

JG - Metallurgy, metal materials

OECD FORD branch

—

Project

<a href="/en/project/LN00B029" target="_blank" >LN00B029: Centre of Materials and Technology Resaerch</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Silicon 2002

ISBN

—

ISSN

—

e-ISSN

—

Number of pages

5

Pages from-to

78-82

Publisher name

Ed. K.Vojtěchovský, TECON Scientific, s.r.o.

Place of publication

Rožnov pod Radhoštěm

Event location

Rožnov pod Radhoštěm

Event date

Oct 5, 2002

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

—