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Abnormal grain growth in electrochemically deposited Cu films

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27360%2F04%3A00010186" target="_blank" >RIV/61989100:27360/04:00010186 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Abnormal grain growth in electrochemically deposited Cu films

  • Original language description

    Cu interconnects are essential in advanced integrated circuits to minimize the RC delay. In manufacturing these devices, Cu is deposited electrochemically using a plating bath containing organic additives. The as-deposited nanocrystalline Cu films undergo self-annealing at room temperature to form a micronsized grain structure by abnormal grain growth. Systematic experimental studies of self-annealing kinetics on model Cu films deposited on a Au substrate suggest that the rate of grain size evolution depends primarily on the initial grain size of the as-deposited film. A model for the observed abnormal grain growth process is proposed. Assuming that desorption of the organic additives leads to mobile grain boundaries, the onset of abnormal grain growthis attributed to a sufficiently low additive concentration such that a full coverage of all grain boundaries cannot be maintained. The incubation time of abnormal growth is then a logarithmic function of the initial grain size. The proba

  • Czech name

    Abnormální růst zrna v elektrochemicky nanášených vrstvách mědi.

  • Czech description

    Abnormální růst zrna v elektrochemicky nanášených vrstvách mědi.

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JG - Metallurgy, metal materials

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GP101%2F03%2FP165" target="_blank" >GP101/03/P165: Microstructure evolution of electroplated copper thin films for on-chip interconnections near room temperature</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2004

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Materials Science Forum

  • ISSN

    0-87849-952-0

  • e-ISSN

  • Volume of the periodical

    467-470

  • Issue of the periodical within the volume

    2

  • Country of publishing house

    CH - SWITZERLAND

  • Number of pages

    6

  • Pages from-to

    1339-1344

  • UT code for WoS article

  • EID of the result in the Scopus database