Measurement on semiconductor samples
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989592%3A15310%2F23%3A73621994" target="_blank" >RIV/61989592:15310/23:73621994 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Measurement on semiconductor samples
Original language description
The report summarizes results based on measurements of a given set of SiC wafers (provided by Onsemi) in order to present our possibilities in the area of their characterization. Defects, inhomogeneities and certain features of SiC wafers were observed using advanced confocal microscopy. Mechanical properties of TaC coating on graphite substrate and SiC wafer (hardness, modulus of elasticity) were studied using nanoindentation tests. The differences in index of refraction and dielectric function between selected samples were measured by UV/VIS ellipsometry.
Czech name
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Czech description
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Classification
Type
V<sub>souhrn</sub> - Summary research report
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
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Continuities
N - Vyzkumna aktivita podporovana z neverejnych zdroju
Others
Publication year
2023
Confidentiality
C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.
Data specific for result type
Number of pages
108
Place of publication
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Publisher/client name
ON Semiconductor CZ, s.r.o., Rožnov pod Radhoštěm
Version
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