Laser Gas-Phase Photolysis of Organosilicon Compounds: Approach to Formation of Hydrogenated Si/C, Si/C/F, Si/C/O and Si/O Phases.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F00%3A27000175" target="_blank" >RIV/67985858:_____/00:27000175 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Laser Gas-Phase Photolysis of Organosilicon Compounds: Approach to Formation of Hydrogenated Si/C, Si/C/F, Si/C/O and Si/O Phases.

Original language description

The IR and UV laser photolysis of cyclic and cyclic organosilanes, fluoromethylsilanes, alkoxysilanes and disiloxanes is shown to yield films of polycarbosilanes, polytrimethylsiloxyhydrocarbons and of hydrogenated SiC, Si/C/F and Si/C/O and Si/O materials. The chemistry occuring in the gas phase is discussed in conjunction with properties of the deposited materials and the technique is demonstrated to represent an easy and efficient way of chemical vapour deposition of the Si-based phases onto low temperature substrates.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CH - Nuclear and quantum chemistry, photo chemistry

OECD FORD branch

—

Project

<a href="/en/project/IAA4072806" target="_blank" >IAA4072806: Laser induced decomposition of hydridodisiloxanes</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2000

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Review Journal PINSA

ISSN

—

e-ISSN

—

Volume of the periodical

66

Issue of the periodical within the volume

1

Country of publishing house

IN - INDIA

Number of pages

30

Pages from-to

107-136

UT code for WoS article

—

EID of the result in the Scopus database

—