Preparation of Si/O/C Nanotubes Using Ge Nanowires as Template

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00380129" target="_blank" >RIV/68378271:_____/12:00380129 - isvavai.cz</a>
Alternative codes found
RIV/61388980:_____/12:00380129 RIV/67985858:_____/12:00380129 RIV/61388955:_____/12:00380129
Result on the web
<a href="http://dx.doi.org/10.1016/j.jaap.2012.05.005" target="_blank" >http://dx.doi.org/10.1016/j.jaap.2012.05.005</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jaap.2012.05.005" target="_blank" >10.1016/j.jaap.2012.05.005</a>

Result language
angličtina
Original language name
Preparation of Si/O/C Nanotubes Using Ge Nanowires as Template
Original language description
The silicon oxycarbide Si/O/C nanotubes were prepared by two-step procedure. First, a nanostructure deposit mainly composed of nanocables with germanium core was synthetized by low pressure chemical vapor deposition (LPCVD) using hexamethyldigermane Ge2Me6 and 1,1,3,3-tetramethyldisilazane (Me2SiH)2NH as the volatile precursors. Second, LPCVD was followed by annealing at 850 °C in vacuum to evaporate germanium core. As a result Si/O/C nanotubes were formed. Various techniques such as Raman spectroscopy,TEM, SEM/EDX, XPS and HRTEM were used to study the physical and chemical properties.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
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Project
<a href="/en/project/GA203%2F09%2F1088" target="_blank" >GA203/09/1088: Preparation of the nanostructured Si/Ge/C deposits</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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