On the effect of oxygen flooding on the detection of noble gas ions in a SIMS instrument

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F10%3A00349994" target="_blank" >RIV/67985882:_____/10:00349994 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

On the effect of oxygen flooding on the detection of noble gas ions in a SIMS instrument

Original language description

We have investigated the report by Desgranges and Pasquet (2004) [1] that O2 gas flooding in a secondary ion mass spectrometer could enhance by a factor of about 5 the Xe+ ion yield for a Xe implant in UO2 sputtered by O2+ primary ions. For a Xe implantin Si sputtered by O2+ primary ions and for Xe+ sputtering of silicon in steady state, O2 gas flooding reduced the Xe+ ion signal by a factor of about 2, presumably due to loss of Xe+ by resonant charge exchange with gas-phase oxygen molecules. The yieldof a Kr co-implant in Si was unaffected by oxygen flooding. However, we demonstrate that for steady-state Ar+ sputtering of uranium, the Ar+ ion yield can be increased by a factor of 1.7 by oxygen flooding.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

—

Project

—

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Nuclear Instruments & Methods in Physics Research Section B

ISSN

0168-583X

e-ISSN

—

Volume of the periodical

268

Issue of the periodical within the volume

17-18

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

8

Pages from-to

—

UT code for WoS article

000281498900033

EID of the result in the Scopus database

—