Morphology and origin of V-defects in semipolar (11-22) InGaN

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F12%3A00396578" target="_blank" >RIV/67985882:_____/12:00396578 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2011.11.055" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2011.11.055</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2011.11.055" target="_blank" >10.1016/j.jcrysgro.2011.11.055</a>

Result language
angličtina
Original language name
Morphology and origin of V-defects in semipolar (11-22) InGaN
Original language description
V-shaped pits (V-defects) were observed in semipolar (11 (2) over bar2)-oriented InGaN/GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE). The pit morphology was that of inverted rhombic or trigonal pyramids aligned along the in-plane [1(1) over bar 00] direction. Pit facet orientations were identified. The surface pits were found to be connected at their apex to mixed type a+c threading dislocations with large screw components. Such dislocations exhibited (11 (2) over bar0] average line directions with zig-zag < 10 (1) over bar0 > local lines, and they also induced V-defects at the InGaN/GaN interface.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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