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Calculations of High-Frequency Noise Spectral Densityof Different CdTe Metal–Semiconductor–Metal Schottky Contacts

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F19%3A00509581" target="_blank" >RIV/68081723:_____/19:00509581 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216208:11320/19:10400003

  • Result on the web

    <a href="https://link.springer.com/content/pdf/10.1007/s11664-019-07612-w.pdf" target="_blank" >https://link.springer.com/content/pdf/10.1007/s11664-019-07612-w.pdf</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s11664-019-07612-w" target="_blank" >10.1007/s11664-019-07612-w</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Calculations of High-Frequency Noise Spectral Densityof Different CdTe Metal–Semiconductor–Metal Schottky Contacts

  • Original language description

    An analytical approach for the study of high-frequency noise in different CdTeSchottky contacts is proposed. The model takes into account the fluctuationsfrom three primary current sources: the leakage current through the Schottkybarrier, the fluctuations of surface charge current, and the excess carrierdensity produced by light illumination (photocurrent). In particular, the cur-rent densities related to the perturbation of the electric field inside the wholestructure and the free carrier fluctuations are used to determine the detec-tivity in the Giga and the Terahertz frequencies. It is shown that the currentspectral density exhibits a resonance peak near 109Hz due to the free carrierconcentration. The excess carrier fluctuations show a negligible contributionto the total spectral current density. It was found that the Au-S-Au structurepresents a high detectivity due to their low noise level of the leakage current.These findings and the detailed model describing the current fluctuationprocesses in the detector is crucial for the development of detection technology

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Electronic Materials

  • ISSN

    0361-5235

  • e-ISSN

  • Volume of the periodical

    48

  • Issue of the periodical within the volume

    12

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    7

  • Pages from-to

    7806-7812

  • UT code for WoS article

    000519972500024

  • EID of the result in the Scopus database

    2-s2.0-85073795413