Calculations of High-Frequency Noise Spectral Densityof Different CdTe Metal–Semiconductor–Metal Schottky Contacts
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F19%3A00509581" target="_blank" >RIV/68081723:_____/19:00509581 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/19:10400003
Result on the web
<a href="https://link.springer.com/content/pdf/10.1007/s11664-019-07612-w.pdf" target="_blank" >https://link.springer.com/content/pdf/10.1007/s11664-019-07612-w.pdf</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s11664-019-07612-w" target="_blank" >10.1007/s11664-019-07612-w</a>
Alternative languages
Result language
angličtina
Original language name
Calculations of High-Frequency Noise Spectral Densityof Different CdTe Metal–Semiconductor–Metal Schottky Contacts
Original language description
An analytical approach for the study of high-frequency noise in different CdTeSchottky contacts is proposed. The model takes into account the fluctuationsfrom three primary current sources: the leakage current through the Schottkybarrier, the fluctuations of surface charge current, and the excess carrierdensity produced by light illumination (photocurrent). In particular, the cur-rent densities related to the perturbation of the electric field inside the wholestructure and the free carrier fluctuations are used to determine the detec-tivity in the Giga and the Terahertz frequencies. It is shown that the currentspectral density exhibits a resonance peak near 109Hz due to the free carrierconcentration. The excess carrier fluctuations show a negligible contributionto the total spectral current density. It was found that the Au-S-Au structurepresents a high detectivity due to their low noise level of the leakage current.These findings and the detailed model describing the current fluctuationprocesses in the detector is crucial for the development of detection technology
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Electronic Materials
ISSN
0361-5235
e-ISSN
—
Volume of the periodical
48
Issue of the periodical within the volume
12
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
7806-7812
UT code for WoS article
000519972500024
EID of the result in the Scopus database
2-s2.0-85073795413