Examination of semiconductor structures with slow electrons.

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F02%3A12020033" target="_blank" >RIV/68081731:_____/02:12020033 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Examination of semiconductor structures with slow electrons.
Original language description
Possibilities for visualization of the doped areas and variances in the local density of electron states are briefly reviewed. First examples are presented of utilizing very slow electrons in a cathode lens equipped SEM for this purpose. These include acquisition of the doping contrast via secondary electrons and observation of the local energy band structure by means of elastically backscattered electrons.
Czech name
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Czech description
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Project
<a href="/en/project/IAA1065901" target="_blank" >IAA1065901: Wave-optical contrasts in the scanning electron microscope</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 2nd annual meeting of the Czechoslovak microscopy society.
ISBN
80-238-8749-1
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
19-22
Publisher name
CSMS
Place of publication
Brno
Event location
Vranovská Ves [CZ]
Event date
Feb 8, 2002
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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