Profiling of N-Type Dopants in Silicon Based Structures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F09%3A00335293" target="_blank" >RIV/68081731:_____/09:00335293 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Profiling of N-Type Dopants in Silicon Based Structures
Original language description
We have focused on variously doped n-type pattems on a lightly doped p-type substrate because of lack of data for these structures. We have designed and prepared planar structures of this kind at the university clean room. Combination of the UHV SEM andPEEM microscooes should facilitate possible quantifying of the the doping levels in the n-type areas and explanation of their contrast with respect to the p-type substrate. In addition to the SEM observations at very low energies (down to the units of eV), we performed the laterally resolved threshold and soft X-ray spectroscopies in a PEEM equipped with an energy filter.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 4th Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology (CJCS?09)
ISBN
978-80-254-4535-8
ISSN
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e-ISSN
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Number of pages
1
Pages from-to
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Publisher name
ISI AS CR
Place of publication
Brno
Event location
Brno
Event date
Aug 10, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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