Mapping the Local Density of States by Very-Low-Energy Scanning Electron Microscope

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F10%3A00340743" target="_blank" >RIV/68081731:_____/10:00340743 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Mapping the Local Density of States by Very-Low-Energy Scanning Electron Microscope

Original language description

Reflection of very slow electrons from solid surfaces has been reported to be inversely proportional to the local density of electronic states coupled to the incident electron wave. The reflected electron flux at units of eV used as the image signal in ascanning electron microscope allows mapping of the local density of states at high spatial resolution. Good performance of the microscope at very low energies is enabled by introducing the beam-retarding immersion lens (the cathode lens) with a biased specimen serving as the cathode. Results of demonstration experiments on aluminum are provided.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Materials Transactions

ISSN

1345-9678

e-ISSN

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Volume of the periodical

51

Issue of the periodical within the volume

2

Country of publishing house

JP - JAPAN

Number of pages

5

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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