Parameter Optimization of Multi-Level Diffraction Gratings
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F17%3A00464388" target="_blank" >RIV/68081731:_____/17:00464388 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Parameter Optimization of Multi-Level Diffraction Gratings
Original language description
Originally, the e-beam lithography (EBL) is a technique for creating high-resolution black and white masks for the optical lithography. Multi-level relief structures can be also prepared using EBL patterning. Their preparation is based on the image patterning with a gradient of exposure doses. Large-area multi-level structures can be effectively prepared using the electron beam pattern generator with a variable shaped beam. We present several writing strategies. Basically, the main writing strategy uses one stamp (i.e. one elementary exposure of the shaped electron beam) per one elementary area with the same exposure dose. This simple approach is fast and flexible, however it does not guarantee optimal results. The main problem is an imperfection of the stamps (size, shape, and homogeneity). Advanced algorithms are based on multiplenexposure of the same elementary area, the total local exposure dose is a sum of several different elementary exposures (stamps). Using these algorithms, a smoother surface of the structure can be achieved. On the other hand, the writing speed is considerably decreased. Tradeoff between the achieved parameters and the writing speed is discussed for selected set of writing strategy algorithms.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
21002 - Nano-processes (applications on nano-scale); (biomaterials to be 2.9)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
NANOCON 2016. 8th International Conference on Nanomaterials - Research and Application. Conference Proceedings
ISBN
978-80-87294-71-0
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
751-756
Publisher name
Tanger
Place of publication
Ostrava
Event location
Brno
Event date
Oct 19, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000410656100130