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Effect of native oxide on the crystal orientation contrast in SEM micrographs obtained at hundreds, tens and units of eV

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F21%3A00549396" target="_blank" >RIV/68081731:_____/21:00549396 - isvavai.cz</a>

  • Result on the web

    <a href="https://www.sciencedirect.com/science/article/pii/S0304399120302928?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0304399120302928?via%3Dihub</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.ultramic.2020.113144" target="_blank" >10.1016/j.ultramic.2020.113144</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Effect of native oxide on the crystal orientation contrast in SEM micrographs obtained at hundreds, tens and units of eV

  • Original language description

    This paper aims to elucidate the effect of native air-formed oxide on the crystallographic contrast between differently oriented copper grains in scanning electron microscope images obtained at energies from 0 eV up to 1 keV. The contrast between the Cu grains is strongly affected by the presence of native oxide. The crystallographic orientation contrast between the grains without covering the native oxide layer is relatively weak at hundreds of eV, negligible at tens of eV, and dramatically increases at energies below 10 eV. At extremely low landing energies, say below similar to 1 eV, the surface potential differences caused by work function variations between the differently oriented Cu grains affect the primary electrons, which enables us to obtain the micrographs with high crystallographic contrast. This contrast becomes surprisingly visible even if the grains are covered by a several nm thick native oxide layer. The presence of the native air-formed oxide layer on the Cu surface is inconsiderable for the contrast formation at energies close to the mirror conditions (< 1 eV). The surface potential differences originating in the substrate can affect the incident electrons through the native oxide film situated on the Cu surface. Scanning low-energy electron microscopy is a powerful tool for mapping local work function differences with a spatial resolution slightly better than 30 nm due to high sensitivity to local electrical potentials.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/TN01000008" target="_blank" >TN01000008: Center of electron and photonic optics</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Ultramicroscopy

  • ISSN

    0304-3991

  • e-ISSN

    1879-2723

  • Volume of the periodical

    220

  • Issue of the periodical within the volume

    January

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    6

  • Pages from-to

    113144

  • UT code for WoS article

    000600833500006

  • EID of the result in the Scopus database

    2-s2.0-85093933635