Stability of masking materials for pattern transfer of lithographic masks into fused silica by atmospheric pressure plasma jet etching

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F25%3A00643245" target="_blank" >RIV/68081731:_____/25:00643245 - isvavai.cz</a>

Result on the web

<a href="https://www.sciencedirect.com/science/article/pii/S2590007225000152" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2590007225000152</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mne.2025.100309" target="_blank" >10.1016/j.mne.2025.100309</a>

Result language

angličtina

Original language name

Stability of masking materials for pattern transfer of lithographic masks into fused silica by atmospheric pressure plasma jet etching

Original language description

Masking of thin films and bulk materials is traditionally applied for the transfer of micron patterns into the functional material according to the requirements of the application. For optical purposes, lithographically produced micron patterns are transferred by plasma/ion etching, which is a traditional technology in microelectronics and other micron technologies. However, pattern transfer by atmospheric pressure plasma etching can help to save time and cost for a future sustainable production. Therefore, the pattern transfer of lithographic resist masks into fused silica using atmospheric pressure reactive plasma jets (APPJ) was studied as a new approach of micropatterning. First the etch rates of the potential masking materials, e.g. photoresists, as well as of fused silica as substrate are studied in dependence on the APPJ etching parameters, in particular on the gas composition (O-2/CF4) and the dwell time of the APPJ tool's footprint. Typical etch rates of the masking materials are in the range of 140 to 370 nm<middle dot>s(-1) whereas the fused silica has a rate of 25 to 80 nm<middle dot>s(-1). The surface morphology of masking materials changes during etching and features additional nanoscale roughness and waviness. The surface roughness of the etched masking materials and the fused silica are 2 to 5 nm rms and 1.5 nm rms for etch depths of similar to 3000 nm and similar to 600 nm, respectively. Finally, the pattern transfer by APPJ of a diffraction grating with a period of 15 mu m, depth of 230 nm and a roughness below 2 nm rms into fused silica was demonstrated.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10305 - Fluids and plasma physics (including surface physics)

Project

<a href="/en/project/EH22_008%2F0004624" target="_blank" >EH22_008/0004624: PHOTOMACHINES - Photosynthetic cell redesign for high yields of therapeutic peptides</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Micro and Nano Engineering

ISSN

2590-0072

e-ISSN

2590-0072

Volume of the periodical

28

Issue of the periodical within the volume

September

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

8

Pages from-to

100309

UT code for WoS article

001541364800001

EID of the result in the Scopus database

2-s2.0-105011174452