Comparison between chemical and plasmatic treatment of seeding layer for patterned diamond growth

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00355161" target="_blank" >RIV/68378271:_____/10:00355161 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Comparison between chemical and plasmatic treatment of seeding layer for patterned diamond growth
Original language description
We employ UV photolithographic and electron beam lithographic patterning of diamond seeding layer on SiO2/Si substrates for the selective growth of micrometer and sub-micrometer diamond patterns. Using bottom-up strategy, thin diamond channels (470 nm inwidth) are directly grown. Differences between wet chemical and plasma treatment on the patterned diamond growth are studied. We find that the density of parasitic diamond crystals (outside predefined patterns) is lowered for gas mixture CF4/O2 plasma than for rich O2 plasma. After CF4/O2 plasma treatment, the density of parasitic crystals is 106 cm-2 which is comparable to the wet chemical treatment. Introducing sandwich-like structure, i.e. photoresist-seeding layer-photoresist, and its treatment (lift-off and CF4/O2 plasma) further reduces the density of parasitic crystals down to 105 cm-2.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Diamond Electronics and Bioelectronics - Fundamentals to Applications III
ISBN
978-1-60511-176-6
ISSN
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e-ISSN
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Number of pages
7
Pages from-to
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Publisher name
Materials Research Society
Place of publication
Warrendale, PA
Event location
Boston
Event date
Nov 30, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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