Nucleation of diamond micro-patterns with photoluminescent SiV centers controlled by amorphous silicon thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00520201" target="_blank" >RIV/68378271:_____/19:00520201 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/19:00330103
Result on the web
<a href="https://doi.org/10.1016/j.apsusc.2019.03.064" target="_blank" >https://doi.org/10.1016/j.apsusc.2019.03.064</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2019.03.064" target="_blank" >10.1016/j.apsusc.2019.03.064</a>
Alternative languages
Result language
angličtina
Original language name
Nucleation of diamond micro-patterns with photoluminescent SiV centers controlled by amorphous silicon thin films
Original language description
Selective deposition of diamond allows bottom-up growth of diamond nanostructures and nanoscale devices. However, it remains challenging to reduce the size of the patterns and to suppress parasitic spontaneous nucleation. We show here that thin layers of hydrogenated amorphous silicon (down to 40 nm) efficiently suppress spontaneous nucleation of diamond. The suppression of diamond nucleation does not depend on the substrate materials below hydrogenated amorphous silicon (Si, SiO2, Pt, Ni). We attribute the suppressed diamond nucleation to surface disorder on atomic scale. By using a structured layer of hydrogenated amorphous silicon, highly selective growth of diamond micro-patterns with optically active SiV centers by low-temperature microwave plasma chemical vapor deposition is achieved.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
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Volume of the periodical
480
Issue of the periodical within the volume
June
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
6
Pages from-to
1008-1013
UT code for WoS article
000463008200115
EID of the result in the Scopus database
2-s2.0-85062731816