Renewal of three-dimensional nanocrystalline diamond bio-transistor by low temperature hydrogenation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00388761" target="_blank" >RIV/68378271:_____/12:00388761 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/12:00200579
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Renewal of three-dimensional nanocrystalline diamond bio-transistor by low temperature hydrogenation
Original language description
We employ directly grown microscopic (20um and 5um) solution-gated field-effect transistors (SGFET) as a biosensor with H-terminated surface acting as a gate insulator towards solution and generator of surface conductivity at the same time.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
XII. Pracovní setkání fyzikálních chemiků a elektrochemiků - sborník příspěvků
ISBN
978-80-7375-618-5
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
110-112
Publisher name
Mendelova univerzita v Brně
Place of publication
Brno
Event location
Brno
Event date
May 30, 2012
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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