Strain accommodation within porous buffer layers in heteroepitaxial growth

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00396817" target="_blank" >RIV/68378271:_____/12:00396817 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/12:00396817
Result on the web
<a href="http://dx.doi.org/10.1109/ASDAM.2012.6418524" target="_blank" >http://dx.doi.org/10.1109/ASDAM.2012.6418524</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ASDAM.2012.6418524" target="_blank" >10.1109/ASDAM.2012.6418524</a>

Result language
angličtina
Original language name
Strain accommodation within porous buffer layers in heteroepitaxial growth
Original language description
We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x) As layers
Czech name
—
Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems
ISBN
978-1-4673-1197-7
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
235-238
Publisher name
IEEE
Place of publication
New York
Event location
Smolenice Castle
Event date
Nov 11, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000316566500056

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