Lattice-mismatched epitaxial growth on porous III-V substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00437411" target="_blank" >RIV/68378271:_____/13:00437411 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/13:00437411
Result on the web
<a href="http://dx.doi.org/10.1149/05808.0053ecst" target="_blank" >http://dx.doi.org/10.1149/05808.0053ecst</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1149/05808.0053ecst" target="_blank" >10.1149/05808.0053ecst</a>
Alternative languages
Result language
angličtina
Original language name
Lattice-mismatched epitaxial growth on porous III-V substrates
Original language description
We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with lattice mismatched In(x)Ga(1-x)As layers
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ECS Transactions
ISBN
—
ISSN
1938-5862
e-ISSN
—
Number of pages
8
Pages from-to
53-60
Publisher name
Electrochemical Society
Place of publication
Pennington
Event location
San Francisco
Event date
Oct 27, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—