Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00396370" target="_blank" >RIV/68378271:_____/13:00396370 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21230/13:00206548

Result on the web

<a href="http://dx.doi.org/10.1016/j.tsf.2013.02.116" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2013.02.116</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2013.02.116" target="_blank" >10.1016/j.tsf.2013.02.116</a>

Result language

angličtina

Original language name

Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

Original language description

Luminescence properties of MOVPE grown LEDs with active InAs/GaAs QD layer covered by GaAsSb SRL were investigated at temperatures from 10 to 400 K. Results show that the use of GaAsSb SRL with up to 14% Sb strongly increases luminescence, redshifts theemission maximum up to 1.4 ?m while keeping the type I transition, narrows the luminescence linewidth and keeps the separation energy between the ground and excited state as in InAs/GaAs QD LEDs without SRL. The ground state electroluminescence shows thetypical Stranski-Krastanov dot temperature properties. The electroluminescence intensity of the ground and excited state transitions increases with temperature (up to 80 K) due to the thermal escape of electrons from the wetting layer which reduces radiative recombination via wetting layer states. The dominant mechanism responsible for the thermal quenching of electroluminescence at elevated temperatures is the escape of electrons from QDs to the GaAs barrier.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Volume of the periodical

543

Issue of the periodical within the volume

Sept

Country of publishing house

CH - SWITZERLAND

Number of pages

5

Pages from-to

83-87

UT code for WoS article

000324049500020

EID of the result in the Scopus database

—