Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00431319" target="_blank" >RIV/68378271:_____/14:00431319 - isvavai.cz</a>

Alternative codes found

RIV/67985882:_____/14:00431319

Result on the web

<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.117" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2014.02.117</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.117" target="_blank" >10.1016/j.apsusc.2014.02.117</a>

Result language

angličtina

Original language name

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Original language description

Elastic accommodation of heteroepitaxial layers beyond their critical thickness is crucial for the reduction of misfit dislocations. In this work, pore networks were introduced electrochemically in GaAs substrates in order to modify their mechanical responses. InxGa1xAs epilayers with nominal indium contents up to x = 0.20 were then deposited by MOVPE, and were compared to similar epilayers grown on nonporous GaAs. Strain relaxation and defect introduction were studied by TEM observations, x-ray diffraction, and photoluminescence measurements. It was found that the porous substrates acted to reduce the density of misfit dislocations, thereby increasing the epilayer critical thickness. The InGaAs epilayers retained a significantly higher amount of elastic strain compared to ones grown on nonporous GaAs. The onset of plasticity was mediated by the pores, which acted as nucleation sites for 60° dislocations that glided toward the interface.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/7AMB12GR034" target="_blank" >7AMB12GR034: III-V semiconductor heterostructures/nanostructures towards innovative electronic and photonic applications</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Surface Science

ISSN

0169-4332

e-ISSN

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Volume of the periodical

306

Issue of the periodical within the volume

Jul

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

5

Pages from-to

89-93

UT code for WoS article

000336591500017

EID of the result in the Scopus database

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