Type-I InAs quantum dots covered by GaAsSb strain reducing layer

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00439648" target="_blank" >RIV/68378271:_____/14:00439648 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2061749" target="_blank" >http://dx.doi.org/10.1117/12.2061749</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2061749" target="_blank" >10.1117/12.2061749</a>

Result language
angličtina
Original language name
Type-I InAs quantum dots covered by GaAsSb strain reducing layer
Original language description
This work is focused on examining ultrafast photoluminescent properties of InAs QDs grown on GaAs substrate and covered by GaAs1-xSbx SRL. The aim is to understand the processes occurring inside the QDs and wetting layer and how the SRL influences the energy levels inside the QDs. Using upconversion method we measured luminescence dynamics of two samples with different concentration of Sb in the SRL with sub-picosecond time resolution. We investigated the effect of temperature, as well as the intensityand wavelength of the excitation pulse. We consequently derived recombination and relaxation processes occurring inside InAs QDs and also proved that the transport of charge carriers from the substrate and from the WL into the QDs is efficient.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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