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Growth and properties of AIII BV QD structures for intermediate band solar cells

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00447827" target="_blank" >RIV/68378271:_____/15:00447827 - isvavai.cz</a>

  • Alternative codes found

    RIV/67985882:_____/15:00447827

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.11.013" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2014.11.013</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.11.013" target="_blank" >10.1016/j.jcrysgro.2014.11.013</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Growth and properties of AIII BV QD structures for intermediate band solar cells

  • Original language description

    Intermediate band solar cells theoretically offer a promising way to significantly increase cell efficiency compared to a single-junction solar cell. We focused on the preparation of antimony containing materials as a covering of QD layers. In this paperwe discuss how the concentration gradient of GaAsSb strain reducing layers can influence the resulting optical properties of the solar cell structures. The main principle of the structure is that the absorption of light is achieved at QD excited stateswith better overlap of electron and hole wave functions. With fast relaxation of carriers to the ground state the electrons and holes are quickly spatially separated. Two different composition gradients of GaAsSb SRL were used for the solar cell structure. One or five quantum dot stacks were compared. The maximal PC increased approximately 17 times with increasing number of QD layers from 1 to 5. The results suggest high application potential of this structure for photovoltaics.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GP14-21285P" target="_blank" >GP14-21285P: Intermediate band solar cells</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Crystal Growth

  • ISSN

    0022-0248

  • e-ISSN

  • Volume of the periodical

    414

  • Issue of the periodical within the volume

    172

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    5

  • Pages from-to

    172-176

  • UT code for WoS article

    000349602900031

  • EID of the result in the Scopus database

    2-s2.0-84922496581