Growth and properties of AIII BV QD structures for intermediate band solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00447827" target="_blank" >RIV/68378271:_____/15:00447827 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/15:00447827
Result on the web
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.11.013" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2014.11.013</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.11.013" target="_blank" >10.1016/j.jcrysgro.2014.11.013</a>
Alternative languages
Result language
angličtina
Original language name
Growth and properties of AIII BV QD structures for intermediate band solar cells
Original language description
Intermediate band solar cells theoretically offer a promising way to significantly increase cell efficiency compared to a single-junction solar cell. We focused on the preparation of antimony containing materials as a covering of QD layers. In this paperwe discuss how the concentration gradient of GaAsSb strain reducing layers can influence the resulting optical properties of the solar cell structures. The main principle of the structure is that the absorption of light is achieved at QD excited stateswith better overlap of electron and hole wave functions. With fast relaxation of carriers to the ground state the electrons and holes are quickly spatially separated. Two different composition gradients of GaAsSb SRL were used for the solar cell structure. One or five quantum dot stacks were compared. The maximal PC increased approximately 17 times with increasing number of QD layers from 1 to 5. The results suggest high application potential of this structure for photovoltaics.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GP14-21285P" target="_blank" >GP14-21285P: Intermediate band solar cells</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Crystal Growth
ISSN
0022-0248
e-ISSN
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Volume of the periodical
414
Issue of the periodical within the volume
172
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
5
Pages from-to
172-176
UT code for WoS article
000349602900031
EID of the result in the Scopus database
2-s2.0-84922496581