Semiconducting WO3 thin films prepared by pulsed reactive magnetron sputtering
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00454787" target="_blank" >RIV/68378271:_____/15:00454787 - isvavai.cz</a>
Alternative codes found
RIV/60461373:22310/15:43900479
Result on the web
<a href="http://dx.doi.org/10.1007/s11164-015-1991-8" target="_blank" >http://dx.doi.org/10.1007/s11164-015-1991-8</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s11164-015-1991-8" target="_blank" >10.1007/s11164-015-1991-8</a>
Alternative languages
Result language
angličtina
Original language name
Semiconducting WO3 thin films prepared by pulsed reactive magnetron sputtering
Original language description
WO3 crystalline semiconductor thin films for water-splitting applications were prepared by pulsed unbalanced reactive magnetron sputtering with W target and Ar+O2 gas mixture. Postdeposition annealing at temperature of 450°C was applied to the WO3 samples to improve their crystallinity and semiconductor properties. Various pulsing modes were tested in deposition experiments with different pulsing frequencies, discharge power applied in pulse, and average applied power. To determine the influence of theplasma parameters on the deposition process, the pulsed and average ion flux density on the substrate were measured using an ion probe. Different crystallite orientations were found for different modes of discharge pulsing. Preferential orientation of the (200) plane parallel to the substrate surface was identified for higher frequency of discharge pulsing with lower substrate pulsed ion flux but higher average substrate ion flux.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Research on Chemical Intermediates
ISSN
0922-6168
e-ISSN
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Volume of the periodical
41
Issue of the periodical within the volume
12
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
8
Pages from-to
9259-9266
UT code for WoS article
000365743300009
EID of the result in the Scopus database
2-s2.0-84924692431