WO3 thin films prepared by sedimentation and plasma sputtering

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00474060" target="_blank" >RIV/68378271:_____/17:00474060 - isvavai.cz</a>

Alternative codes found

RIV/60461373:22310/17:43914890 RIV/61989592:15310/17:73581891

Result on the web

<a href="http://dx.doi.org/10.1016/j.cej.2016.09.083" target="_blank" >http://dx.doi.org/10.1016/j.cej.2016.09.083</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.cej.2016.09.083" target="_blank" >10.1016/j.cej.2016.09.083</a>

Result language

angličtina

Original language name

WO3 thin films prepared by sedimentation and plasma sputtering

Original language description

Tungsten trioxide (WO3) semiconducting thin films were prepared by (i) sedimentation process, (ii) reactive magnetron sputtering from tungsten target under various modes of plasma excitation and (iii) combination of both methods. All samples were deposited on FTO (fluorine-doped tin oxide) coated glass substrate and were annealed after deposition under open air conditions in 450 C in order to improve their crystallinity and semiconductor properties. This study deals with a comparison of photo-electrochemical properties of the layers prepared by the methods mentioned above. After annealing, all the prepared WO3 films revealed monoclinic crystalline structure while the as-deposited samples were amorphous. Different orientation of crystallites was found for different mode of discharge pulsing in plasma prepared samples. The presence of crystalline WO3 is essential for significant photocurrent response.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10305 - Fluids and plasma physics (including surface physics)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Chemical Engineering Journal

ISSN

1385-8947

e-ISSN

—

Volume of the periodical

318

Issue of the periodical within the volume

Jun

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

8

Pages from-to

281-288

UT code for WoS article

000399851600033

EID of the result in the Scopus database

2-s2.0-85016318309