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Intermediate band solar cell structures grown by MOVPE

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455033" target="_blank" >RIV/68378271:_____/15:00455033 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Intermediate band solar cell structures grown by MOVPE

  • Original language description

    Intermediate band solar cell structures were prepared by MOVPE. This type of structure offer a promising way to significantly increase cell efficiency compared to a single-junction solar cells. Efficient photocurrent generation above 1200 nm (below Si band gap) was demonstrated. The promising spectral dependence at this region may be explained by the better carrier separation by a triangular barrier in the valence band suppressing the radiative recombination rate in QDs in this type of structure. In thecase of InAs + Ga(As)Sb combined QD samples, a strong decrease of the photocurrent was observed when the number of QD layers in the structure was changed from 1 to 5. This can probably be caused by too complicated structure with multiple combined QD layers, where accumulation of strain and structural defects very probably take place and suppress photocurrent.

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GP14-21285P" target="_blank" >GP14-21285P: Intermediate band solar cells</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů