Intermediate band solar cell structures grown by MOVPE
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455033" target="_blank" >RIV/68378271:_____/15:00455033 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Intermediate band solar cell structures grown by MOVPE
Original language description
Intermediate band solar cell structures were prepared by MOVPE. This type of structure offer a promising way to significantly increase cell efficiency compared to a single-junction solar cells. Efficient photocurrent generation above 1200 nm (below Si band gap) was demonstrated. The promising spectral dependence at this region may be explained by the better carrier separation by a triangular barrier in the valence band suppressing the radiative recombination rate in QDs in this type of structure. In thecase of InAs + Ga(As)Sb combined QD samples, a strong decrease of the photocurrent was observed when the number of QD layers in the structure was changed from 1 to 5. This can probably be caused by too complicated structure with multiple combined QD layers, where accumulation of strain and structural defects very probably take place and suppress photocurrent.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GP14-21285P" target="_blank" >GP14-21285P: Intermediate band solar cells</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů