Graphene on SiC (0001) inspected by dynamic atomic force microscopy at room temperature

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00456224" target="_blank" >RIV/68378271:_____/15:00456224 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/15:00369808
Result on the web
<a href="http://dx.doi.org/10.3762/bjnano.6.93" target="_blank" >http://dx.doi.org/10.3762/bjnano.6.93</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3762/bjnano.6.93" target="_blank" >10.3762/bjnano.6.93</a>

Result language
angličtina
Original language name
Graphene on SiC (0001) inspected by dynamic atomic force microscopy at room temperature
Original language description
We investigated single-layer graphene on SiC (0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomicforce maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out- of-plane relaxations of carbon atoms.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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