Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F15%3A00369808" target="_blank" >RIV/68407700:21340/15:00369808 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/15:00456224
Result on the web
<a href="https://doi.org/10.3762/bjnano.6.93" target="_blank" >https://doi.org/10.3762/bjnano.6.93</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3762/bjnano.6.93" target="_blank" >10.3762/bjnano.6.93</a>

Result language
angličtina
Original language name
Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature
Original language description
We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms.
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
21001 - Nano-materials (production and properties)

Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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