A combined in situ RAS, in vacuo XPS and ab initio DFT study of the GaP/Si(100) heterointerface
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471306" target="_blank" >RIV/68378271:_____/16:00471306 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
A combined in situ RAS, in vacuo XPS and ab initio DFT study of the GaP/Si(100) heterointerface
Original language description
We study the preparation and atomi order of the buried GaP/Si(001) heterointerfaces in situ with RAS, XPS, and ab initio DFT. We demonstrate that preparation of almost single domain Si(001) substrate succeeds in suppressing anti-phase disorder in GaP epitaxial layers.n
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů