GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536206" target="_blank" >RIV/68378271:_____/20:00536206 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.apsusc.2020.145903" target="_blank" >https://doi.org/10.1016/j.apsusc.2020.145903</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2020.145903" target="_blank" >10.1016/j.apsusc.2020.145903</a>
Alternative languages
Result language
angličtina
Original language name
GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering
Original language description
THere we applied gas cluster ion beam sputtering in combination with in-situ XPS (GCIB-XPS) to analyze buried GaP/Si(001) heterointerfaces. The GCIB method was used to dig a crater into the 20 nm thick GaP(001) film. We found optimal parameters for GCIB sputtering and achieved interface layers without severe damage. Destructive effects, i.e. broadening of core level peaks, could not be completely avoided, however, and the formation of metallic Ga on the GaP surface was observed. Photoemission spectra of the sputtered heterostructures were compared with corresponding reference spectra of sputtered bulk crystals. Interface contributions to the intensity of phosphorus and sillicon core level peaks were revealed. Similar results were obtained on 4 nm thick GaP/Si(001) by XPS. Finally, a top-to-bottom concept for buried semiconductor interfaces studies by GCIB-XPS is demonstrated.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
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Volume of the periodical
514
Issue of the periodical within the volume
Jun
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
8
Pages from-to
1-8
UT code for WoS article
000523185200046
EID of the result in the Scopus database
2-s2.0-85080891661