Channel engineering for nanotransistors in a semiempirical quantum transport model

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00501948" target="_blank" >RIV/68378271:_____/17:00501948 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.3390/math5040068" target="_blank" >http://dx.doi.org/10.3390/math5040068</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/math5040068" target="_blank" >10.3390/math5040068</a>

Result language
angličtina
Original language name
Channel engineering for nanotransistors in a semiempirical quantum transport model
Original language description
One major concern of channel engineering in nanotransistors is the coupling of the conduction channel to the source/drain contacts. In a previous publications, we have developed a semiempirical quantum model in quantitative agreement with three series of experimental transistors. On the basis of this model, an overlap parameter 0 C 1 can be defined as a criterion for the quality of the contact-to-channel coupling: A high level of C means good matching between the wave functions in the source/drain and in the conduction channel associated with a low contact-to-channel reflection. We show that a high level of C leads to a high saturation current in the ON-state and a large slope of the transfer characteristic in the OFF-state.n
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GB14-37427G" target="_blank" >GB14-37427G: Center of spintronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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