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In-situ impedance spectroscopy of a plasma-semiconductor thin film system during reactive sputter deposition

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00512097" target="_blank" >RIV/68378271:_____/19:00512097 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216208:11320/19:10405930

  • Result on the web

    <a href="https://doi.org/10.1063/1.5102163" target="_blank" >https://doi.org/10.1063/1.5102163</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.5102163" target="_blank" >10.1063/1.5102163</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    In-situ impedance spectroscopy of a plasma-semiconductor thin film system during reactive sputter deposition

  • Original language description

    We present a comparatively simple-to-apply in situ diagnostic suitable for determining the dielectric properties of nonconducting and semiconducting thin films during plasma-aided deposition. The method is based on measurement of the impedance spectrum of a system plasma-film within the kilohertz range of frequencies, i.e., without the need of special equipment. Total film capacitance, resistance, and the loss factor tan δ can be estimated in situ from the measured impedance spectra.n

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10305 - Fluids and plasma physics (including surface physics)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Applied Physics

  • ISSN

    0021-8979

  • e-ISSN

  • Volume of the periodical

    126

  • Issue of the periodical within the volume

    2

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    12

  • Pages from-to

    1-12

  • UT code for WoS article

    000487020900005

  • EID of the result in the Scopus database

    2-s2.0-85068884362