In-situ impedance spectroscopy of a plasma-semiconductor thin film system during reactive sputter deposition

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00512097" target="_blank" >RIV/68378271:_____/19:00512097 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/19:10405930
Result on the web
<a href="https://doi.org/10.1063/1.5102163" target="_blank" >https://doi.org/10.1063/1.5102163</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.5102163" target="_blank" >10.1063/1.5102163</a>

Result language
angličtina
Original language name
In-situ impedance spectroscopy of a plasma-semiconductor thin film system during reactive sputter deposition
Original language description
We present a comparatively simple-to-apply in situ diagnostic suitable for determining the dielectric properties of nonconducting and semiconducting thin films during plasma-aided deposition. The method is based on measurement of the impedance spectrum of a system plasma-film within the kilohertz range of frequencies, i.e., without the need of special equipment. Total film capacitance, resistance, and the loss factor tan δ can be estimated in situ from the measured impedance spectra.n
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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