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Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00556013" target="_blank" >RIV/68378271:_____/22:00556013 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216208:11310/22:10438973

  • Result on the web

    <a href="https://doi.org/10.1016/j.diamond.2021.108815" target="_blank" >https://doi.org/10.1016/j.diamond.2021.108815</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.diamond.2021.108815" target="_blank" >10.1016/j.diamond.2021.108815</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates

  • Original language description

    The use of {113} oriented single crystal diamond substrates has been reported for CVD growth of high-quality p-type layers with increased doping efficiency, compared to the {100} orientation, and excellent electrical properties. In this work we expand the range of crystal orientations to include the {118} and {115} planes and study the effect of B doping level in the gas phase with B/C ratios from 250 up to 2000 ppm. We demonstrate the growth of high-quality B doped SCD layers, with low RMS roughness (<2 nm) and high surface chemical purity (99% C with >1% B) for all orientations. Boron incorporation is shown to be dependent not only on the B/C in the gas phase, but also on the crystallographic orientation, with orientations with a higher density of {100}/{111} steps and risers exhibiting higher B incorporation into the solid from the gas phase (4 × 1019 cm−3 up to 1 × 1021 cm−3). Finally, using electro-chemical techniques, we confirm, for the first-time, high-quality electrodes on such orientations.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2022

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Diamond and Related Materials

  • ISSN

    0925-9635

  • e-ISSN

    1879-0062

  • Volume of the periodical

    123

  • Issue of the periodical within the volume

    Mar

  • Country of publishing house

    CH - SWITZERLAND

  • Number of pages

    8

  • Pages from-to

    108815

  • UT code for WoS article

    000873439200001

  • EID of the result in the Scopus database

    2-s2.0-85124231733