Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00556013" target="_blank" >RIV/68378271:_____/22:00556013 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11310/22:10438973
Result on the web
<a href="https://doi.org/10.1016/j.diamond.2021.108815" target="_blank" >https://doi.org/10.1016/j.diamond.2021.108815</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.diamond.2021.108815" target="_blank" >10.1016/j.diamond.2021.108815</a>
Alternative languages
Result language
angličtina
Original language name
Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates
Original language description
The use of {113} oriented single crystal diamond substrates has been reported for CVD growth of high-quality p-type layers with increased doping efficiency, compared to the {100} orientation, and excellent electrical properties. In this work we expand the range of crystal orientations to include the {118} and {115} planes and study the effect of B doping level in the gas phase with B/C ratios from 250 up to 2000 ppm. We demonstrate the growth of high-quality B doped SCD layers, with low RMS roughness (<2 nm) and high surface chemical purity (99% C with >1% B) for all orientations. Boron incorporation is shown to be dependent not only on the B/C in the gas phase, but also on the crystallographic orientation, with orientations with a higher density of {100}/{111} steps and risers exhibiting higher B incorporation into the solid from the gas phase (4 × 1019 cm−3 up to 1 × 1021 cm−3). Finally, using electro-chemical techniques, we confirm, for the first-time, high-quality electrodes on such orientations.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Diamond and Related Materials
ISSN
0925-9635
e-ISSN
1879-0062
Volume of the periodical
123
Issue of the periodical within the volume
Mar
Country of publishing house
CH - SWITZERLAND
Number of pages
8
Pages from-to
108815
UT code for WoS article
000873439200001
EID of the result in the Scopus database
2-s2.0-85124231733