Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00575228" target="_blank" >RIV/68378271:_____/23:00575228 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0348792" target="_blank" >https://hdl.handle.net/11104/0348792</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevMaterials.7.073403" target="_blank" >10.1103/PhysRevMaterials.7.073403</a>

Result language
angličtina
Original language name
Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems
Original language description
In situ synthesized semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures and two-dimensional electron gases. In contrast to the well-developed semiconductor parts of the hybrid materials, the direct effect of the crystal nanotexture of Al films on the electron transport still remains unclear. This is mainly due to the complex epitaxial relation between Al and the semiconductor. Here, we present characterization of Al thin films grown on shallow InAs two-dimensional electron gas systems by molecular beam epitaxy. Using a growth approach based on an intentional roughening of the epitaxial interface, we demonstrate growth of grain-boundary-free Al.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GM22-22000M" target="_blank" >GM22-22000M: Multipole antiferromagnets: New interlinked chapters in crystallography, band structure, and electronics</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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