Growth of nanocrystalline diamond on gallium oxide using various interlayers

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00575292" target="_blank" >RIV/68378271:_____/23:00575292 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Growth of nanocrystalline diamond on gallium oxide using various interlayers

Original language description

Hetero-integration of Ga2O3 and diamond is an intriguing approach for processing of pn diodes with enhanced thermal properties. In this work, we investigated the growth of nanocrystalline diamond films using microwave plasma CVD on monoclinic beta Ga2O3, which was grown by liquid-injection metal-organic CVD on sapphire employing various interlayers. It was found that the use of an ultrathin SiO2 interlayer (~20 nm) yields highly promising results although optimization of the conditions for AlN deposition is necessary.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

20501 - Materials engineering

Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of ADEPT - ADEPT 2023

ISBN

978-80-554-1977-0

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

28-31

Publisher name

University of Žilina

Place of publication

Žilina

Event location

Podbanské

Event date

Jun 12, 2023

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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