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Role of oxygen in suppression of boron incorporation in diamond films: Surface reactions insight

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00637516" target="_blank" >RIV/68378271:_____/25:00637516 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1016/j.apsusc.2025.163832" target="_blank" >https://doi.org/10.1016/j.apsusc.2025.163832</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.apsusc.2025.163832" target="_blank" >10.1016/j.apsusc.2025.163832</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Role of oxygen in suppression of boron incorporation in diamond films: Surface reactions insight

  • Original language description

    This study explores the underlying mechanisms through which oxygen-containing species suppress boron incorporation in diamond films grown via chemical vapor deposition. A comprehensive understanding of the mechanisms affecting the boron incorporation is crucial for achieving effective control over the doping process. Our experiments demonstrate significantly suppressed boron incorporation after the addition of CO2 to the gas mixture. A notable divergence is observed between the suppression of BH emission intensity in plasma and the actual B incorporation into the diamond layer across a wide range of B/C ratios. Contrary to previous hypotheses attributing the suppression solely to gas phase boron depletion, our findings indicate that surface-related reactions are the primary mechanism. Density functional theory calculations reveal that oxygen and OH radicals promote the desorption of boron-containing species, such as OBH, from the diamond surface, whereas CO and CO2 desorb from the surface without detaching the B atom. The experimental results and theoretical calculations suggest that oxygen hinders boron incorporation into the diamond lattice by forming volatile oxygen-boron compounds and by occupation of surface sites. Our study provides new mechanistic insights into pathways for precise control of boron incorporation, allowing the optimization of boron-doped diamond properties for advanced electronic and electrochemical applications.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Surface Science

  • ISSN

    0169-4332

  • e-ISSN

    1873-5584

  • Volume of the periodical

    709

  • Issue of the periodical within the volume

    Nov

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    9

  • Pages from-to

    163832

  • UT code for WoS article

    001517673400008

  • EID of the result in the Scopus database

    2-s2.0-105008518303