OCVD Carrier Lifetime in Diode Structutes with Axial Carrier Lifetime Gradient
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F04%3A03099485" target="_blank" >RIV/68407700:21230/04:03099485 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
OCVD Carrier Lifetime in Diode Structutes with Axial Carrier Lifetime Gradient
Original language description
The OCVD (open circuit voltage decay) method is generally used method for determination carrier lifetime in structures of semiconductor devices.
Czech name
Není k dispozici
Czech description
Není k dispozici
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
7th International Seminar on Power Semiconductor
ISBN
80-01-03046-6
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
201-205
Publisher name
Ediční středisko ČVUT
Place of publication
Praha
Event location
Praha
Event date
Aug 31, 2004
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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