ESD LVTSCR model calibration by differential evolutionary optimization algorithm

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F13%3A00211977" target="_blank" >RIV/68407700:21230/13:00211977 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
ESD LVTSCR model calibration by differential evolutionary optimization algorithm
Original language description
This paper presents the possibility to use modern optimization algorithm called Differential Evolution to automatically fit the measured data from test chip to the LVTSCR (Low Voltage-Triggered Silicon-Controlled Rectifier) electrostatic discharge (ESD)model without the need of manual model-parameters tuning. In contrast with proposed method the traditional approach using many specific measurements for specific properties quantification can be very time and resource consuming. To the best knowledge ofthe authors, this novel approach has never been previously used by any research group. Authors developed this method for ESD MOSFET model calibration and in this paper the validation for LVTSCR model is being presented. Short introduction to ESD LVTSCR function and properties are presented. Finally, results of fitting the macro-model of LVTSCR to the empirical piece-wise linear I-V characteristic created based on general properties of LVTSCR are summarized.
Czech name
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Czech description
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Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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